With over 40 years of expertise in the Optoelectronics industry, Sarnoff has a sophisticated understanding of demanding system, subsystem and component problems. We exploit this knowledge to provide technical solutions that address these challenging issues. Sarnoff’s products focus on devices operating in the 700nm to 3300nm regime. With proficiency in designing, growing, processing and characterizing high-performance GaAs, InP, GaSb lasers and detectors, we have a unique perspective and product base to offer our government and commercial clients.
Custom Wavelength DFB Diode Lasers
Sarnoff’s distributed feedback (DFB) diode lasers are used in a wide variety of applications that require stable, single-frequency laser sources at unique wavelengths, such as: trace gas sensing, water-vapor sensing, medical sensing, interferometry, metrology and solid-state laser seeding. We are able to custom-design lasers to operate at any wavelength between 1100nm and 2100nm, offering single-wavelength output that can be tuned via temperature and current to precise wavelengths.
- 761 nm DFB Laser Diode
- 815 nm DFB Laser Diode
- 1650 nm DFB Laser Diode
- 1790 nm DFB Laser Diode
- 1854 nm DFB Laser Diode
- 2004 nm DFB Laser Diode
- 2050 nm DFB Laser Diode
High-power Emitters
Mid-IR high-power emitting laser diodes [1] from Sarnoff are available in wavelengths and power outputs that make them excellent choices in such areas as: medical and diagnostic applications, IR countermeasures, water vapor sensing and optical pumping. We control the entire production process, from epi-wafer production in our state-of-the-art foundry to final device fabrication. Sarnoff maintains a diverse inventory of laser diodes, ensuring fast delivery.
- 1850 nm Laser Diode
- 2350 nm Laser Diode
- 2500 nm Laser Diode
- 2700 nm Laser Diode
Foundry Services
Sarnoff’s wafer foundry includes expert OMCVD materials design and growth on one of several reactors, as well as fabrication of devices to fit our customer’s specific needs. Dedicated III-V optoelectronic fabrication facility includes photolithography, dielectric deposition, contact metallization deposition and annealing, semiconductor and dielectric wet and dry etching, holographic grating fabrication, wafer thinning, faced passivation and custom facet coatings.