Four decades ago, the world’s first complimentary metal-oxide semiconductor (CMOS) integrated circuit was developed by Sarnoff. Today, CMOS ICs are a vital technology that can be found in a vast majority of the world’s electronic circuitry. However, as technology advanced, while the unique features of CMOS ICs became commonplace, attempts to leverage CMOS technology to fabricate imaging devices resulted in performance that remained below that of charge-coupled device (CCD) technology. This was most evident in critical scientific applications. Today, Sarnoff applies its proven imaging and IC expertise to achieve CCD performance levels with CMOS designs.

Based on monolithic CMOS and CMOS Hybrid (CCH) designs, Sarnoff can offer scientific performance imaging arrays with advanced capabilities ranging from 100% fill factor, high quantum efficiency (QE), back illumination and high speed, to radiation tolerant spaceborne imaging with flexible readout and curved focal plane options. Sarnoff CMOS imaging arrays can be fabricated to provide direct UV sensitivity — utilizing no coatings to reduce resolution, responsiveness or device lifetime. Challenging designs of 100 Mega pixel class sensors with reasonable transfer speeds, scalable resolution and region of interest (ROI) windowing are within the capabilities of Sarnoff’s technology.

Sarnoff applies over 40 years of experience in imaging to high-performance government, instrumentation and medical markets. Additionally, we assist clients with high-volume consumer and automotive applications. Advanced CMOS imaging arrays are also used in vital scientific and aerospace applications that require superior execution and efficiency.